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mrf5s4125nr1 mrf5s4125nbr1 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for broadband commercial an d industrial applications with frequencies up to 500 mhz. the high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. ? typical single - carrier n - cdma performance @ 465 mhz: v dd = 28 volts, i dq = 1100 ma, p out = 25 watts avg., is - 95 cdma (pilot, sync, paging, traffic codes 8 through 13). channel bandwidth = 1.2288 mhz. par = 9.8 db @ 0.01% probability on ccdf. power gain ? 23 db drain efficiency ? 30.2% acpr @ 750 khz offset ? - 47.6 dbc in 30 khz bandwidth ? capable of handling 10:1 vswr, @ 28 vdc, 465 mhz, 125 watts cw output power features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? 200 c capable plastic package ? rohs compliant ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, +15 vdc storage temperature range t stg - 65 to +150 c operating junction temperature (1,2) t j 200 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 90 c, 125 w cw case temperature 90 c, 25 w cw r jc 0.33 0.43 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf5s4125n rev. 0, 1/2007 freescale semiconductor technical data mrf5s4125nr1 mrf5s4125nbr1 450 - 480 mhz, 25 w avg., 28 v single n - cdma lateral n - channel rf power mosfets case 1484 - 04, style 1 to - 272 wb - 4 mrf5s4125nbr1 case 1486 - 03, style 1 to - 270 wb - 4 mrf5s4125nr1 ? freescale semiconductor, inc., 2007. all rights reserved.
2 rf device data freescale semiconductor mrf5s4125nr1 mrf5s4125nbr1 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1b (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c table 5. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 10 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 400 adc) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 28 vdc, i d = 1100 madc, measured in functional test) v gs(q) 3.5 4.25 5 vdc drain - source on - voltage (v gs = 10 vdc, i d = 1.5 adc) v ds(on) 0.05 0.175 0.3 vdc dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2.41 ? pf output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 74.61 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 1100 ma, p out = 25 w avg. n - cdma, f = 465 mhz, single - carrier n - cdma, 1.2288 mhz channel bandwidth carrier. acpr measured in 30 khz channel bandwidth @ 750 khz offset. par = 9.8 db @ 0.01% probability on ccdf. power gain g ps 22 23 25 db drain efficiency d 28 30.2 ? % adjacent channel power ratio acpr ? - 47.6 -45 dbc input return loss irl ? -15 -9 db 1. part internally input matched.
mrf5s4125nr1 mrf5s4125nbr1 3 rf device data freescale semiconductor figure 1. mrf5s4125nr1(nbr1) test circuit schematic rf input rf output c1 v supply v bias z7 z9 dut z6 z4 z8 l1 z1 z2 z3 c5 b1 r1 r2 c6 b2 r3 z5 c3 c2 l2 c4 z10 c8 c7 l3 c13 z11 z12 z13 z16 z14 z17 c9 z15 c14 c15 c16 + c10 c11 z18 z19 z20 z21 z22 c12 z1 0.186 x 0.084 microstrip z2 0.206 x 0.084 microstrip z3 1.171 x 0.084 microstrip z4 0.275 x 0.084 microstrip z5 0.985 x 0.084 microstrip z6, z7 0.130 x 0.084 microstrip z8 0.131 x 0.084 microstrip z9 0.675 x 0.504 microstrip z10 0.397 x 0.656 microstrip z11 0.071 x 0.084 microstrip z12 0.008 x 0.084 microstrip z13 0.063 x 0.084 microstrip z14 0.315 x 0.084 microstrip z15 0.473 x 0.084 microstrip z16 0.522 x 0.084 microstrip z17 0.448 x 0.084 microstrip z18 0.628 x 0.084 microstrip z19 0.291 x 0.084 microstrip z20 0.318 x 0.084 microstrip z21 0.202 x 0.084 microstrip z22 0.190 x 0.084 microstrip pcb arlon ad250, 0.030 , r = 2.5 table 6. mrf5s4125nr1(nbr1) test circuit component designations and values part description part number manufacturer b1, b2 ferrite beads, short 2743019447 fair - rite c1, c6, c12, c13 120 pf chip capacitors atc600b121bt250xt atc c2, c10 0.8 - 8.0 pf, variable capacitors, gigatrim 27291sl johanson c3, c9 20 pf chip capacitors atc600b200bt250xt atc c4 8.2 pf chip capacitor atc600b8r2bt250xt atc c5, c14, c15 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c7 27 pf chip capacitor atc600b270bt250xt atc c8 47 pf chip capacitor atc600b470bt250xt atc c11 3.3 pf chip capacitor atc600b3r3bt250xt atc c16 22 f, 35 v tantalum capacitor t491x226k035a5 kemet l1, l2 1.6 nh inductors 0906 - 2 coilcraft l3 27 nh inductor 1812sms - 27n_l coilcraft r1 1000 , 1/4 w chip resistor crcw12061001fkta vishay r2 10 k , 1/4 w chip resistor crcw12061002fkta vishay r3 100 , 1/4 w chip resistor crcw1206100rfkta vishay
4 rf device data freescale semiconductor mrf5s4125nr1 mrf5s4125nbr1 figure 2. mrf5s4125nr1(nbr1) test circuit component layout cut out area c6 mrf5s4125n rev. 1 r1 r2 c5 b1 b2 r3 l2 c3 c4 c2 l1 c1 c10 c7 c9 c11 c8 l3 c12 c16 c15 c13 c14
mrf5s4125nr1 mrf5s4125nbr1 5 rf device data freescale semiconductor typical characteristics irl, input return loss (db) acpr (dbc), alt1 (dbc) 500 420 irl g ps acpr alt1 f, frequency (mhz) figure 3. single - carrier n - cdma broadband performance @ p out = 25 watts avg. ?20 0 ?10 ?5 v dd = 28 vdc, p out = 25 w (avg.) i dq = 1100 ma, single?carrier n?cdma 480 460 440 17 25 ?65 36 32 28 ?45 ?50 ?55 ?60 d , drain efficiency (%) d g ps , power gain (db) 24 23 22 21 20 19 18 430 450 470 490 24 ?15 irl, input return loss (db) acpr (dbc), alt1 (dbc) 500 420 irl g ps acpr alt1 f, frequency (mhz) figure 4. single - carrier n - cdma broadband performance @ p out = 58 watts avg. ?20 0 ?5 ?10 480 460 440 17 25 ?60 52 48 44 ?20 ?30 ?40 ?50 d , drain efficiency (%) d g ps , power gain (db) 24 23 22 21 20 19 18 430 450 470 490 40 ?15 figure 5. two - tone power gain versus output power 100 18 25 1 i dq = 1650 ma 1375 ma 24 23 21 10 300 p out , output power (watts) pep g ps , power gain (db) 20 22 825 ma 550 ma figure 6. third order intermodulation distortion versus output power ?10 1 100 ?20 ?30 ?40 300 ?50 10 p out , output power (watts) pep intermodulation distortion (dbc) imd, third order i dq = 550 ma 1100 ma 825 ma 562.5 ma 1.2288 mhz channel bandwidth par = 9.8 db @ 0.01% probability (ccdf) 19 200 v dd = 28 vdc f1 = 465 mhz, f2 = 467.5 mhz two ?tone measurements, 2.5 mhz tone spacing 1100 ma 200 v dd = 28 vdc f1 = 465 mhz, f2 = 467.5 mhz two ?tone measurements, 2.5 mhz tone spacing 1375 ma v dd = 28 vdc, p out = 58 w (avg.) i dq = 1100 ma, single?carrier n?cdma 1.2288 mhz, channel bandwidth par = 9.8 db @ 0.01% probability (ccdf)
6 rf device data freescale semiconductor mrf5s4125nr1 mrf5s4125nbr1 typical characteristics figure 7. intermodulation distortion products versus output power p out , output power (watts) pep imd, intermodulation distortion (dbc) ?70 ?10 1 100 ?40 ?50 10 ?30 ?20 7th order 5th order 3rd order figure 8. intermodulation distortion products versus tone spacing 10 two ?tone spacing (mhz) im7 ?l ?30 ?40 ?50 1 100 imd, intermodulation distortion (dbc) figure 9. pulsed cw output power versus input power 36 59 25 p in , input power (dbm) 56 54 52 26 28 27 30 29 33 31 actual ideal p1db = 51.16 dbm (130.62 w) 57 53 55 32 34 24 p out , output power (dbm) p6db = 52.98 dbm (198.6 w) figure 10. single - carrier n - cdma acpr, alt1, power gain and drain efficiency versus output power 0?75 p out , output power (watts) avg. 50 ?25 25 ?35 20 ?40 15 ?55 5 ?70 110 ?60 10 d g ps t c = ?30 c acpr d , drain efficiency (%), g ps , power gain (db) acpr (dbc), alt1 (dbc) 50 p3db = 52.26 dbm (168.27 w) 300 im7 ?u im5 ?l im5 ?u im3 ?l im3 ?u ?20 ?10 35 51 30 35 40 45 ?65 ?50 ?45 ?30 25 c 85 c v dd = 28 vdc, i dq = 1100 ma, f = 465 mhz single ?carrier n?cdma 1.2288 mhz channel bandwidth, par = 9.8 db @ 0.01% probability (ccdf) 49 ?30 c ?60 200 v dd = 28 vdc f1 = 465 mhz, f2 = 467.5 mhz two ?tone measurements, 2.5 mhz tone spacing ?60 58 alt1 85 c 25 c ?30 c 85 c 25 c v dd = 28 vdc, p out = 120 w (pep) i dq = 1100 ma, two ?tone measurements (f1 + f2)/2 = center frequency of 465 mhz 60 v dd = 28 vdc, i dq = 1100 ma cw f = 465 mhz
mrf5s4125nr1 mrf5s4125nbr1 7 rf device data freescale semiconductor typical characteristics this above graph displays calculated mttf in hours when the device is operated at v dd = 28 vdc, p out = 25 w avg., and d = 30.2%. mttf calculator available at http:/www.freescale.com/rf. select tools/software/application software/calculators to access the mttf calculators by product. 100 17 1 0 90 p out , output power (watts) cw figure 11. power gain and drain efficiency versus cw output power v dd = 28 vdc i dq = 1100 ma f = 465 mhz t c = ?30 c 25 c 10 26 25 24 23 22 80 70 60 50 40 d , drain efficiency (%) g ps d g ps , power gain (db) 19 300 85 c ?30 c 85 c 21 20 18 30 20 10 25 c figure 12. power gain versus output power p out , output power (watts) cw g ps , power gain (db) 20 24 0 250 22 50 100 23 v dd = 24 v 28 v 32 v i dq = 1100 ma f = 465 mhz 21 150 200 250 10 9 90 t j , junction temperature ( c) figure 13. mttf versus junction temperature 10 8 10 7 10 5 110 130 150 170 190 mttf (hours) 210 230 10 6
8 rf device data freescale semiconductor mrf5s4125nr1 mrf5s4125nbr1 n - cdma test signal 10 0.0001 100 0 peak ?to?average (db) figure 14. single - carrier ccdf n - cdma 10 1 0.1 0.01 0.001 2468 is?95 cdma (pilot, sync, paging, traffic codes 8 through 13) 1.2288 mhz channel bandwidth carrier. acpr measured in 30 khz bandwidth @ 750 khz offset. par = 9.8 db @ 0.01% probability on ccdf. probability (%) ?60 ?110 ?10 (db) ?20 ?30 ?40 ?50 ?70 ?80 ?90 ?100 1.2288 mhz channel bw 2.9 0.7 2.2 1.5 0 ?0.7 ?1.5 ?2.2 ?2.9 ?3.6 3.6 f, frequency (mhz) figure 15. single - carrier n - cdma spectrum ?acpr in 30 khz integrated bw ?acpr in 30 khz integrated bw
mrf5s4125nr1 mrf5s4125nbr1 9 rf device data freescale semiconductor z o = 25 z load z source f = 385 mhz f = 545 mhz f = 545 mhz f = 385 mhz v dd = 28 vdc, i dq = 1100 ma, p out = 25 w avg. f mhz z source z load 385 4.735 + j2.917 2.229 + j5.627 405 4.073 + j4.202 1.809 + j6.123 425 3.987 + j5.466 1.842 + j6.684 445 3.909 + j6.743 1.767 + j7.187 465 4.094 + j7.661 1.822 + j7.338 485 4.128 + j9.483 1.566 + j8.397 505 4.446 + j11.620 1.525 + j9.787 525 4.921 + j13.710 1.769 + j11.120 545 5.437 + j15.838 2.023 + j12.467 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 16. series equivalent source and load impedance z source z load input matching network device under test output matching network
10 rf device data freescale semiconductor mrf5s4125nr1 mrf5s4125nbr1 package dimensions datum plane bottom view a1 2x d1 e3 e1 d3 e4 a2 pin 5 note 8 a b c h drain lead d a m aaa c 4x b1 2x d2 notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m?1994. 3. datum plane ?h? is located at the top of lead and is coincident with the lead where the lead exits the plastic body at the top of the parting line. 4. dimensions ? d" and ? e1" do not include mold protrusion. allowable protrusion is .006 per side. dimensions ? d" and ? e1" do include mold mismatch and are deter? mined at datum plane ?h?. 5. dimension ? b1" does not include dambar protrusion. allowable dambar protrusion shall be .005 total in excess of the ? b1" dimension at maximum material condition. 6. datums ?a? and ?b? to be determined at datum plane ?h?. 7. dimension a2 applies within zone ? j" only. 8. hatching represents the exposed area of the heat slug. c1 f zone j e2 2x a dim a min max min max millimeters .100 .104 2.54 2.64 inches a1 .039 .043 0.99 1.09 a2 .040 .042 1.02 1.07 d .712 .720 18.08 18.29 d1 .688 .692 17.48 17.58 d2 .011 .019 0.28 0.48 d3 .600 ? ? ? 15.24 ? ? ? e .551 .559 14 14.2 e1 .353 .357 8.97 9.07 e2 .132 .140 3.35 3.56 e3 .124 .132 3.15 3.35 e4 .270 ? ? ? 6.86 ? ? ? f b1 .164 .170 4.17 4.32 c1 .007 .011 0.18 0.28 e .025 bsc .106 bsc 0.64 bsc 2.69 bsc 1 style 1: pin 1. drain 2. drain 3. gate 4. gate 5. source aaa .004 0.10 gate lead 4x e 2x e seating plane 4 2 3 ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? e5 .346 .350 8.79 8.89 case 1486 - 03 issue c to - 270 wb - 4 plastic mrf5s4125nr1
mrf5s4125nr1 mrf5s4125nbr1 11 rf device data freescale semiconductor
12 rf device data freescale semiconductor mrf5s4125nr1 mrf5s4125nbr1
mrf5s4125nr1 mrf5s4125nbr1 13 rf device data freescale semiconductor
14 rf device data freescale semiconductor mrf5s4125nr1 mrf5s4125nbr1 product documentation refer to the following documents to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3263: bolt down mounting method for high power rf transistors and rfics in over - molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 0 jan. 2007 ? initial release of data sheet
mrf5s4125nr1 mrf5s4125nbr1 15 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2007. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf5s4125n rev. 0, 1/2007

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